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Detailed Program
| Paper Number : AD-P03 |
| Time Frame : 12:00~13:30 |
| Presentation Date : Thursday, 27, November |
| Session Name : Ueno Shunkichi |
| Session Chair 1# : - |
| Session Chair 2# : - |
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| Fabrication of EBC with Eutectic Structure for Silicon Carbide Substrate |
| Ueno Shunkichi |
| Nihon University |
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Keywords: Al2O3/HfO2 Eutectic EBC, FGM layer, solidification
A silicon carbide ceramics with Al2O3/HfO2 eutectic layer was successfully prepared by optical zone melting method. The EBC film is consisted with thin HfC/HfO2 functional graded Material (FGM) layer and eutectic structure layer. These two layers were formed together during the optical zone melting process. At this process, the mixture of oxides with Al2O3/HfO2 eutectic composition was melt down on the SiC substrate. The surface of SiC substrate is slightly decomposed and the liquid phase on the substrate was reduced. The alumina component in the liquid phase sublimated in to atmosphere and the composition of the liquid phase become hafnia rich composition. The excess hafnia component reacts with free carbon and hafnium carbide phase was solidified on the SiC substrate. Then, solidification of the liquid phase produced the Al2O3/HfO2 eutectic layer on the HfC intermediate layer.
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| Acknowledgements : |
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