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Detailed Program
Paper Number : EL-P01 |
Time Frame : 12:00~13:30 |
Presentation Date : Friday, 28, November |
Session Name : Electronic Ceramics |
Session Chair 1# : - |
Session Chair 2# : - |
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Effect of process parameters on electrical properties of CSD-derived Ba(Zr,Ti)O3 thin films |
Mr.Yutaro Dda |
Shizuoka University |
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Ba(Zr, Ti)O3 (BZT) thin films are expected to apply as lead-free piezoelectrics and tunable capacitors because of their excellent dielectricity, piezoelectricity and tunability, if the curie temperatures can be controlled. In this study, we introduced (100)-oriented LNO buffer layer by CSD method in which molecular structure of precursor solution or nanostructure of the resulting thin film was controlled to relax the tensile stress from Si wafer, leading to the compressive residual stress in BZT thin films. As a resalt, (100)-predominant BZT thin films have been successfully deposited on LaNiO3(LNO)/Pt/Si and LSCO/LNO/Pt/Si substrates, and therefore, we can expect the enhancement of the electrical properties of the BZT thin films. Furthermore, we investigate the effect of process parameters in preparation of BZT thin films to obtain the dense nano-structure and/or larger compressive stress. |
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