KJ Ceramics 31

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Detailed Program

Paper Number : LD-P01

Time Frame : 12:00~13:30

Presentation Date : Thursday, 27, November

Session Name : LED and Display Materials

Session Chair 1# : -

Session Chair 2# : -

Influence of electron-beam irradiation on properties of ITO thin films

Seung-Hong KIM

University of Ulsan

Keywords: ITO, Thin film, Electron-beam, Flexible electrode

Sn doped In2O3 (ITO) films have been studied in the optoelectronic industry because it contains unique optical and electrical properties. However, conventional ITO film prepared on flexible substrate shows the high resistivity and it is difficult to activate Sn dopant into In2O3 matrix due to limitations of process temperature [1]. Thus, low temperature process is essentially required to activate of dopant for flexible device.
In this study, to develop a good quality of ITO thin film (100 nm). It has been deposited on polycarbonate (PC) substrate by RF magnetron sputtering and in addition, electron-beam irradiation on the surface also conducted with optimized e-beam incident energy. The resistivity and transmittance of the e-beam irradiated films were measured by the Hall-effect measurement and the UV-visible spectrometer. The structural and morphological characterization was performed by X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively.
References:
[1] S.H Choa, C.K Cho, W.J Hwang, K.T Eun and H.K Kim, SOLMAT. 95 (2011) 3442.

Acknowledgements : “This research was financially supported by the Ministry of Education (MOE) and National Research Foundation of Korea(NRF) through the Human Resource Training Project for Regional Innovation (No. NRF-2013H1B8A2032122)”

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