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Detailed Program
| Paper Number : NA-P09 |
| Time Frame : 12:00~13:30 |
| Presentation Date : Friday, 28, November |
| Session Name : Nano-particles & Nano-structured Materials |
| Session Chair 1# : - |
| Session Chair 2# : - |
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| In Situ Magnetic Field-Assisted Growth of High Quality GaN Nanowires |
| Yong Soo Cho |
| Yonsei University |
|
| Growth of GaN nanowires at a low temperature of 750 oC and at atmospheric pressure via the vapor-liquid-solid mechanism is reported with remarkable control of directionality and growth behavior by using an in situ magnetic field. The nanowires are severely twisted and kinked, and exhibit a high density of planer stacking defects under typical growth conditions without any magnetic field,. The defects are found to decrease progressively with increasing in situ magnetic field strength. Near-vertical aligned straight and several micrometers long nanowires of average diameter of ~40 nm are produced at an applied magnetic field strength of 0.80 T. According to photoluminescence measurements, the relative intensity of the defect-related peaks in the visible region with respect to the near-band-edge emission continuously decreases with increase in the applied magnetic field strength. The degree of agglomerative Ni droplet on Si is critically influenced by the surface tension driven by the magnetic force, which in turn determines the eventual properties of the nanowires. |
| Acknowledgements : |
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