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Detailed Program
Paper Number : TF-P02 |
Time Frame : 12:00~13:30 |
Presentation Date : Friday, 28, November |
Session Name : Thin Films & Layers |
Session Chair 1# : - |
Session Chair 2# : - |
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Effects of La Doping on the Structural and Electrical Properties of Bi7Fe3Ti3O21 Thin Film |
Dr.Chinnambedu Murugesan Raghavan |
Changwon National University |
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Effects of La Doping on the Structural and Electrical Properties of Bi7Fe3Ti3O21 Thin Film C. M. Raghavan, J. W. Kim, J. Y. Choi, S. S. Kim* Department of Physics, Changwon National University, Changwon, Gyeongnam 641-773, Korea ∗sskim@changwon.ac.kr Keywords: Bi7Fe3Ti3O21, Bismuth layered structure ferroelectrics, Chemical solution deposition, Ferroelectric properties, Thin film Pure Bi7Fe3Ti3O21 (BFTO21) and La-doped Bi7Fe3Ti3O21 (Bi6.4La0.6Fe3Ti3O21, BLFTO21) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. The effects of La doping on the structural and electrical properties of the thin films were investigated. The structures of the thin films were characterized by X-ray diffraction patterns and Raman spectra. Their electrical properties, such as leakage current density, dielectric behavior, remnant polarization and coercive electric field, were systematically investigated and the results were discussed in detail. This work was supported by the Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2010-0029634). |
Acknowledgements : This work was supported by the Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2010-0029634). |
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