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Detailed Program
Paper Number : TF-P05
Time Frame : 12:00~13:30
Presentation Date : Friday, 28, November
Session Name : Thin Films & Layers
Session Chair 1# : -
Session Chair 2# : -
Effect of Ti buffer layer on the optical and electrical property of In2O3 thin films
Mr. Jaehyun Jeon
University of Ulsan
Indium Oxide (In2O3) films and In2O3/Titanium (Ti) bi-layered films were prepared on glass substrates by DC and RF magnetron sputtering without intentional substrate heating. In order to consider the influence of Ti buffer layer on the structural, optical and electrical properties of the films, the thickness of the layer was varied from 5 to 20 nm. As deposited In2O3 films had an optical transmittance of 76% in visible range and an electrical resistivity of 6.5 ¢®¢¯ 10−3 ¥¨ª cm, while In2O3/Ti films had different optical and electrical properties that were influenced by the thickness of the Ti buffer layer. The lowest resistivity of 2.6 ¢®¢¯ 10−3 ¥¨ª cm was observed at In2O3 90 nm/Ti 10 nm films and the highest optical transmittance of 71%, was obtained at the In2O3 95 nm/Ti 5 nm films. In this study, it can be concluded that the effective thickness of Ti buffer layer is 10 nm in In2O3/Ti bi-layered films.
Acknowledgements : This research was financially supported by the Ministry of Education (MOE) and National Research Foundation of Korea(NRF) through the Human Resource Training Project for Regional Innovation (No. NRF-2013H1B8A2032122).