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Detailed Program
Paper Number : TF-P10
Time Frame : 12:00~13:30
Presentation Date : Friday, 28, November
Session Name : Thin Films & Layers
Session Chair 1# : -
Session Chair 2# : -
Development of High Energy Density Capacitors Development of High Energy Density Capacitors Using Anti-ferroelectric PLZT Thin Films
Dr. Dong chan Woo
Yeungnam University
This work is for the demonstration of a new approach to power electronic film capacitors for large energy storage density using cost effective chemical solution-derived anti-ferroelectric thin film material systems. It provides an advanced processing platform to dramatically expand the functionality and capability of high power energy storage systems. A critical issue of all energy storage devices is the need to reduce size and weight so that power conditioning systems of increasing capacity and functionality can be incorporated into a greater range of applications. The main limitation to improving these systems, particularly on mobile platforms, is the capacity, the size and the reliability of the energy storage capacitors. Of all the components used to make power conditioning systems, capacitors usually occupy the largest volume and weight. Tantalizing tastes of success of the scaling potential have been reported, but no devices without degradations or failures such as electrical or mechanical fatigue and breakdown have yet been scaled to achieve clearly superior energy storage density to existing large size bulk or multi-layer capacitors. Moreover, non-linear dielectrics that are normally utilized in oxide capacitors display decreasing dielectric displacement at the high fields desired for high energy density applications. In contrast, the dielectric displacements of anti-ferroelectrics are maximized at the field-induced transition between ferroelectric and anti-ferroelectric phases. A key focus of the research is on understanding the switching behavior and tailoring the switching to the key demands of high energy density capacitors operating at high fields. In addition, this work focuses on addressing key questions and solutions about the scaling and the reliability of cost-effective high density energy storage capacitors using anti-ferroelectric thin films, thereby making a major advance towards determining the wide range of utility of proposed materials and device structures.
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