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Detailed Program
Paper Number : CO-O01 |
Time Frame : 18:10~18:22 |
Presentation Date : Friday, 28, November |
Session Name : Computational Ceramic Science and Engineering |
Session Chair 1# : Seungwu Han |
Session Chair 2# : Nakeshi Nishimatsu |
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Application of CFD Simulation in the SiC-CVD Process |
Kyoon CHOI |
Korea Inst. of Ceramic Eng. & Tech |
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In order to increase the thickness uniformity in chemical vapor depositon of silicon carbide, we have carried out CFD studies for a horizontally-rotated 3-stage susceptor. We deposited silicon carbide films of 3C-SiC phase showing quite uniform thickness between stages but not uniform one in stage. The cause of this nonuniformity is thought to be originated from the high rotational speed. And the uniformity between stages can be further increased with the 120o split type nozzles from CFD results. Through the formation of silicon carbide film on graphite substrates we can make oxidation-resistant and dust-free graphite components with high hardness for the semiconductor applications.
Figure 1 Hydrogen content distribution on cross-section of CVD chamber with 120o nozzles.
References:
[1] J.-W. Kim, Y.-S. Hahn, K. Choi and J.-H. Lee, J. Comput. Fluids Eng. 18 (2013) 67.
[2] J.-W. Seo and K. Choi, J. Kor. Ceram. Soc. 50 (2013) 533.
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Acknowledgements : This research was supported by the World Premium Materials (WPM) Program (grant No. 10037913) of the Ministry of Knowledge Economy.
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