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Detailed Program
Paper Number : LD-I02
Time Frame : 11:10~11:35
Presentation Date : Friday, 28, November
Session Name : LED and Display Materials
Session Chair 1# : Inhwan Lee
Session Chair 2# : Motoaki Iwaya
GaN Electronic Devices and Their Applications
Jae Kyoung MUN
Electronics and Telecommunications Research Institute
Keywords: GaN, Electronic Devices, Microwave Amplifier, Power Switching, Platform

ETRI has a long R&D history over 25 years for device and process technologies of compound semiconductors, such as GaAs, InP and GaN. But I will talk about GaN, next generation compound semiconductor platform in this talk. GaN-based HEMT devices are attractive candidates for high-power amplifier applications such as next-generation microwave communication systems and high power electronic switching devices. We started the R&D of GaN technologies in 2010, and the progress of GaN microwave and power devices technologies will be presented today.[1-3] In the first part, I will briefly introduce the current status of GaN high power microwave devices for radar system applications. In the second half part of the talk, I¡¯d like to mention about some recent R&D results of GaN power electronic switching devices, such as normally-off FETs and Schottky barrier diodes developed using the ETRI¡¯s proprietary 4-inch GaN full process. During my talk, backside via-etching and copper plated metal-filling technologies will be also discussed as one of the cost-effective key solutions for the high power GaN technologies. Finally, we would like to talk a little bit more about the importance of commercializing GaN power electronic devices for high efficiency energy transform technology in the future.

References:

[1] Jae Kyoung Mun, ¡°AlGaN/GaN HEMTs for X-band Radar Applications¡±, RF Integrated Circuit Technology Workshop 2011, pp. 483-495.
[2] Jae Kyoung Mun et. al.,¡°Current Status of GaN Technologies in ETRI¡±, AWAD 2012.
[3] Youngrak Park et. al., ELECTRONICS LETTERS, Vol. 50 No. 16, pp. 1164–1165(2014).
Acknowledgements : This work was supported by the ¡®Energy Efficient Power Semiconductor Technology for Next Generation Data Center¡¯ IT R&D project (no. 10038766) and the ¡®High Efficiency GaN-based Power Module for Harsh Environment Applications¡¯ R&D project (no. B551179-13-02-06) of the Korea Ministry of Science, ICT and Future Planning.