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Detailed Program
Paper Number : LD-I06
Time Frame : 10:45~11:10
Presentation Date : Friday, 28, November
Session Name : LED and Display Materials (Transparent and Display Electronics)
Session Chair 1# : Hyun-Suk Kim
Session Chair 2# : Hiroshi Fujioka
Zinc-Tin Oxide Thin Film Transistors based on atmospheric processes
Jin-Seong Park
Hanyang University
Amorphous ZnSnO channel layer thin film transistors (TFTs) with various dopants (Al, Ga, and N etc) were fabricated using atmospheric processes (solution and mist-chemical vapor deposition (CVD)). Electrical, structural, and optical properties were systematically investigated as dopants. In particular, co-dopants (Ga and N) ZnSnO TFTs exhibited better electrical performances such as mobility and stability, comparing with only ZnSnO TFTs¡¯ performances. In terms of mobility and stability in atmospheric oxide TFTs, the impurity and oxygen-related defects may play important roles to improve electrical performances. In this talk, various dopants in ZnSnO and ZnO TFTs will be discussed about their behaviors related to electrical, optical, and chemical properties. Then, it may suggest an idea to design general oxide semiconductor material systems under atmospheric pressures.




Figure 1 The variation of threshold voltage on ZnSnO and GaZnSnO:N TFTs under positive bias stress (VGS=20V)

References:

[1] H. J. Jeon, W. J. Maeng, and J. S. Park, Ceramics International 40 (2014) 8769.
[2] B. D. Ahn, H. J. Jeon, and J. S. Park, ACS App. Mater. Interface 6 (2014) 9228.
[3] H. J. Jeon, K. B. Chung, and J. S. Park, J. Electroceram. (2014) Doi 10.1007/s10832-014-9902-8
[4] H. J. Jeon, S. G. Lee, K. S. Shin, S. W. Kim and J. S. Park, J. Alloy and Compounds 614 (2014) 244

Acknowledgements : This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government(MEST) (No. 2012011730)