| Electrical stability of multilayer MoS2 field effect transistor under negative bias stress at various temperatures |
| Jang-Yeon Kwon |
| Yonsei University |
|
Transition metal dichalcogenides (TMDCs), which have a layered structure, are promising semiconductor materials for future electronics [1]. TMDCs are a class of materials with formula MX2, where M is a transition metal element and X is a chalcogen (S, Se, or Te). Among these, MoS2 field effect transistors (FETs) presenting excellent electrical characteristics have been investigated for their potential use in several applications such as logic circuits, memory devices, gas sensors, and phototransistors for future electronics and optoelectronics.
The electrical stability of a transistor is a key requirement for use in a wide range of applications, such as in memory and displays. Specifically, the threshold voltage (Vth) shift under gate bias stress is a critical property for stable operation. The gate bias stress effect is commonly described in a variety of transistors: a-Si thin film transistor (TFT) [2], organic transistor [3], and amorphous oxide TFT [4].
In this study, we investigated electrical stability of multilayer MoS2 FETs under negative gate bias stress at various temperature conditions. The evaluation of the stability was carried out in conditions which minimize artifact due to humidity, light, and electrical stress during transfer curve measurement in order to evaluate inherent properties of MoS2 FETs. The instability of MoS2 FETs under negative bias stress was explained to be due to charge trapping at the gate dielectric or at the interface between the gate dielectric and the channel.
References
1. Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, Nature Nanotechnol. 7, 699 (2012).
2. F. R. Libsch and J. Kanicki, Appl. Phys. Lett. 62, 1286 (1993).
3. S. Mathijssen, M. Clle, H. Gomes, E. Smits, B. deBoer, I. McCulloch, P. Bobbert, and D. deLeeuw, Adv. Mater. 19, 2785 (2007)
4. R. B. M. Cross and M. M. De Souza, Appl. Phys. Lett. 89, 263513 (2006). |
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