| Transparent Display using Quantum Dot LED & Solution-based Oxide TFT |
| Min Suk OH |
| Korea Electronics Technology Institute (KETI) |
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Keywords: Quantum Dot, Oxide, Solution, Thin Film Transistor
The colloidal quantum dots (QDs) which are composed of the compound semiconductors have been one of the prospective candidates for the new light emitting diodes (LEDs) due to their merits such as the low-cost solution process and the color tunability by controlling the size of quantum dot. But, because of the instability of the organic materials, there have been many research activities about the new charge transport layer. But, it is not easy to find the stable organic layers for QD-LEDs because of many restrictions. So, to solve these problems, several research groups have reported the QD-LED using inorganic charge transport layer. Here, to improve the stability of QD-LEDs, we fabricated the QD-LEDs using the inorganic charge transport layer and the inverted structure. And, for the solution-based process, we tried to apply the inorganic nano-particles to the fabrication process of these devices.
And oxide semiconductors have emerged as potential substitute for organic and silicon semiconductors in thin-film electronics. The high mobility in the amorphous state, and excellent uniformity, have extended their applications to active-matrix electronics, including displays, sensor arrays and X-ray detectors. Moreover, their solution processability and optical transparency have opened new horizons for low-cost printable and transparent electronics on plastic substrates. But metal oxide formation by the sol–gel route requires an annealing step at relatively high temperature, which has prevented the incorporation of these materials with the polymer substrates used in high performance flexible electronics. Here we report a general method for forming high-performance and operationally stable metal-oxide semiconductors at room temperature, by deep-ultraviolet photochemical activation of sol–gel films.
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| Acknowledgements : This research was supported by Industrial Strategic Technology Development Programs (10045145, Development of high performance (>70 cm2/Vs) chalcogenide TFT backplane and cadmium-free highly efficient (>30 cd/A) hybrid EL material/devices) & (10049080, Core Technology Development of Low-Energy, Visible-Light-Based Photo-Sintering Equipment for TFT Fabrication Process) funded by the Ministry of Trade, Industry and Energy (MOTIE, Korea). |
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