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Detailed Program
Paper Number : LD-O02
Time Frame : 11:47~11:59
Presentation Date : Thurse day, 27, November
Session Name : LED and Display Materials
Session Chair 1# : In-Hwan Lee
Session Chair 2# : Motoaki Iwaya
A Novel technology for fabrication of AlGaN/GaN HFETs
Seung Kyu Oh
Sunchon National University
GaN-based heterostructure field effect transistors (HFETs) are considered a candidate for high-power and high-frequency applications, such as converters and inverters, owing to their high carrier mobility and high breakdown voltage(BV) characteristics[1]. On the other hand, GaN based HFETs for high power applications are expensive compared to Si-based power devices[2]. To achieve lower cost, GaN growth technology with a lower cost substrate and chip shrink technology is needed. This study examined chip shrink technology for lateral-type AlGaN/GaN HFETs fabricated with a bonding pad above the active area (BPAA) structure. The photosensitive polyimide layer was used as inter metal dielectric (IMD) layer, which yielded a very low leakage current of 5.8 nA/mm2 even at 2kV and a good adhesion property after O2 plasma treatment. The fabricated AlGaN/GaN HFETs with the BPAA structure exhibited good device characteristics, such as a low leakage current of 7.1 ¥ìA at 600 V and a drain current of 24.4 A at VDS 2 V, which has the three times higher value compared to that of the AlGaN/GaN HFETs without the BPAA structure, because the BPAA structure increased the size of active by 300%. This suggests that the BPAA structure is a promising method for reducing the size and cost of the lateral-type AlGaN/GaN HFETs.

Figure 1 Device characteristics of AlGaN/GaN HFETs (a) without BPAA Structure, (b) with BPAA Structure
References:

[1] J. Baliga, IEEE Trans. Electron Devices. 43 (1996) 1717–1731.
[2] R. Chau, S. Datta, M. Doczy, B. Doyle, B. Jin, J.Kavalieros, A. Majumdar, M. Metz and M. Radosavljevic, IEEE Trans. on Nanotechnology 4 (2005) 1553-158
Acknowledgements : This research was supported by Basic Science Research Program through the National Research Foundation of Korea(NRF) fund by the Ministry of Education, Science and Technology(2012R1A1A4A01015373).