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Detailed Program
Paper Number : TF-I03 |
Time Frame : 17:20~17:45 |
Presentation Date : Thurseday, 27, November |
Session Name : Thermoelectrics |
Session Chair 1# : Jaeyeong Heo |
Session Chair 2# : Hiromitsu Kozuka |
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Atomic Layer Deposition of Multicomponent Oxides for Photovoltaic Applications |
Jaeyeong HEO |
Chonnam National University |
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Atomic layer deposition (ALD) is one of the most promising techniques to deposit metal oxide thin films, allowing one to obtain highly conformal layers on planar and three-dimensional structures [1]. I will briefly introduce the ALD technique first and the results on the formation of n-type zinc-tin-oxide thin films using diethylzinc and a newly synthesized tin(II) precursor for zinc and tin precursors, respectively [2,3]. 50 wt.% hydrogen peroxide was selected as a common oxidant used for the ALD reaction. Cuprous oxide (Cu2O) is one of the p-type absorber materials under consideration with the potential to reach 20% power conversion efficiency in thin-film solar cells. Zinc oxide has been demonstrated to show the best match with Cu2O as an n-type buffer layer, but its record efficiency still remains low (<1%) among thin-film-based solar cells. By properly controlling the zinc-to-tin ratio in the zinc-tin-oxide buffer layers, the highest efficiency of 2.65% was achieved for Cu2O-based thin-film solar cells. Detailed analyses on the electrical, structural, and optical properties of the buffer layer will be presented focusing on the tunability of the interface trap states and the conduction band offset.
Figure 1 (left) SEM cross-section image of the fabricated Cu2O-based thin film solar cell, (right) I-V characteristics under 1-sun irradiation
References:
[1] S. M. George, Chem. Rev. 110 (2010) 111.
[2] J. Heo, S. B. Kim, and R. G. Gordon, Appl. Phys. Lett. 101 (2012) 113507.
[3] Y. S. Lee, J. Heo, S. C. Siah, J. P. Mailoa, R. E. Brandt, S. B. Kim, R. G. Gordon, and T. Buonassisi, Energy Environ. Sci. 6 (2013) 2112.
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Acknowledgements : |
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